| PART |
Description |
Maker |
| GBJ35M GBJ35A GBJ35B GBJ35D GBJ35G GBJ35J GBJ35K |
35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
|
WTE[Won-Top Electronics]
|
| MTP35W |
Glass Passivated Triple-Phase Bridge Rectifier, 35A
|
Nell Semiconductor Co., Ltd
|
| DD350 DD356S DD350S DD351 DD351S DD352 DD352S DD35 |
35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| KBPC3500GS KBPC3501GS KBPC3502GS KBPC3504GS KBPC35 |
15/25/35A GLASS PASSIVATED IN-LINE BRIDGE RECTIFIER
Advanced LinCMOS(TM) Rail-To-Rail Dual Operational Amplifier 8-SOIC -40 to 125
Quadruple 2-Input Positive-AND Gates 14-SO -40 to 85 15,25,35钝化的在玻璃生产线桥式整流器
15,25,35A GLASS PASSIVATED IN-LINE BRIDGE RECTIFIER 15,25,35钝化的在玻璃生产线桥式整流器
Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs 14-SO -40 to 85 15,25,35钝化的在玻璃生产线桥式整流器
Dual Advanced LinCMOS(TM) Rail-To-Rail Operational Amplifier 8-SOIC 15,25,35钝化的在玻璃生产线桥式整流器
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
|
| GBPC35005W |
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)
35A GLASS PASSIVATED BRIDGE RECTIFIER
|
Pan Jit International Inc.
Diodes Incorporated
|
| 1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER
|
Chenyi Electronics
http://
|
| GS1J-T1 GS1J-T3 GS1A GS1M-T3 GS1A-T1 GS1A-T3 GS1B- |
CHOKE RF CONFORMAL COATED 0.68UH
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 安培表面贴装玻璃钝化整流
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
WON-TOP ELECTRONICS CO LTD
|
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
| 3SBP3 3SBP5 3SB8 3SBP375 3SB500 3SB200 3SB4 3SBP80 |
Fuses, 3A 250V SB GLASS LEADED SLOW BLOW ELECTRIC FUSE, 3A, 250VAC, 100A (IR), THROUGH HOLE
Fuses, 5A 250V SB GLASS LEADED SLOW BLOW ELECTRIC FUSE, 5A, 250VAC, 200A (IR), THROUGH HOLE
Fuses, 8A 250V SB GLASS SLOW BLOW ELECTRIC FUSE, 8A, 250VAC, 200A (IR), INLINE/HOLDER
Fuses, 375mA 250V SB GLASS LEADED SLOW BLOW ELECTRIC FUSE, 0.38A, 250VAC, 35A (IR), THROUGH HOLE
Fuses, 500mA 250V SB GLASS SLOW BLOW ELECTRIC FUSE, 0.5A, 250VAC, 35A (IR), INLINE/HOLDER
Fuses, 200mA 250V SB GLASS SLOW BLOW ELECTRIC FUSE, 0.2A, 250VAC, 35A (IR), INLINE/HOLDER
Fuses, 4A 250V SB GLASS SLOW BLOW ELECTRIC FUSE, 4A, 250VAC, 200A (IR), INLINE/HOLDER
Fuses, 80mA 250V SB GLASS LEADED
|
Bel Fuse, Inc.
BEL FUSE INC
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
|
